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DRAM is a sort of random access memory, which stores each bit of data in a memory cell composed of a small condenser and transistor, generally using metal-oxide-semiconductor (MOS) technology. DRAM is a random access memory. The condenser may be primed or primed; these two states represent the two values of one bit, historically called 0 and 1. The electrical load on the condensers steadily leaks out, so the chip’s data will quickly be lost without interference. To escape this, DRAM requires an external memory refresh circuit that rewrites the condensers’ data and returns it to its initial load. Compared to the random access static memory (SRAM), which does not require the refreshing of data, it is the distinguishing feature of the dynamic random access memory. DRAM is volatile storage (compare non-volatile memory) since it is lost fast as power is depleted compared to flash storage.
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